Formation of Ohmic contacts in III-nitride light emitting devices
US7345323B2 · kind B2 · utility
7Cited by
17References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 30, 2005 |
| Grant date | Mar 18, 2008 |
| Priority date | — |
| Expiry date | Mar 30, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32341
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 Ω cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.