Daniel A. Steckert
6Patents
4h-index
11Co-inventors
50Inventor score
Filing activity: Aug 1, 1997 → Jun 21, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5965461A | Controlled linewidth reduction during gate pattern formation using a spin-on barc | Emerging Cross-Sectional Technologies | 33 | Expired |
| US6107172A | Controlled linewidth reduction during gate pattern formation using an SiON BARC | Emerging Cross-Sectional Technologies | 31 | Expired |
| US5879975A | Heat treating nitrogen implanted gate electrode layer for improved gate electrode etch profile | Electricity | 26 | Expired |
| US7344975B2 | Method to reduce charge buildup during high aspect ratio contact etch | Emerging Cross-Sectional Technologies | 4 | Expired |
| US8673787B2 | Method to reduce charge buildup during high aspect ratio contact etch | Emerging Cross-Sectional Technologies | 2 | Active |
| US7985692B2 | Method to reduce charge buildup during high aspect ratio contact etch | Emerging Cross-Sectional Technologies | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.