Danilo Re
7Patents
5h-index
9Co-inventors
52Inventor score
Filing activity: Jan 9, 1985 → May 24, 2001
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4703552A | Fabricating a CMOS transistor having low threshold voltages using self-aligned silicide polysilicon gates and silicide interconnect regions | Emerging Cross-Sectional Technologies | 31 | Expired |
| US5407852A | Method of making NOR-type ROM with LDD cells | Electricity | 24 | Expired |
| US6489664B2 | Process for fabricating integrated multi-crystal silicon resistors in MOS technology, and integrated MOS device comprising multi-crystal silicon resistors | Electricity | 24 | Expired |
| US5793086A | NOR-type ROM with LDD cells and process of fabrication | Electricity | 16 | Expired |
| US5075246A | Method of manufacturing integrated circuits having electronic components of two different types each having pairs of electrodes obtained from the same polycrystalline silicon layers and separated by different dielectric materials | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6261916A | Process for fabricating integrated multi-crystal silicon resistors in MOS technology, and integrated MOS device comprising multi-crystal silicon resistors | Electricity | 5 | Expired |
| US5851871A | Process for manufacturing integrated capacitors in MOS technology | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.