David C. Sing
5Patents
3h-index
13Co-inventors
43Inventor score
Filing activity: Mar 29, 2005 → May 4, 2007
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7323373B2 | Method of forming a semiconductor device with decreased undercutting of semiconductor material | Electricity | 15 | Expired |
| US7648884B2 | Semiconductor device with integrated resistive element and method of making | Electricity | 7 | Active |
| US8258035B2 | Method to improve source/drain parasitics in vertical devices | Electricity | 3 | Active |
| US7282426B2 | Method of forming a semiconductor device having asymmetric dielectric regions and structure thereof | Emerging Cross-Sectional Technologies | 2 | Expired |
| US7642163B2 | Process of forming an electronic device including discontinuous storage elements within a dielectric layer | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.