Method of forming a semiconductor device having asymmetric dielectric regions and structure thereof
US7282426B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2005 |
| Grant date | Oct 16, 2007 |
| Priority date | — |
| Expiry date | Jan 21, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/981
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor device including forming a semiconductor substrate; forming a gate electrode over the semiconductor substrate having a first side and a second side, and forming a gate dielectric under the gate electrode. The gate dielectric has a first area under the gate electrode and adjacent the first side of the gate electrode, a second area under the gate electrode and adjacent the second side of the gate electrode, and a third area under the gate electrode that is between the first area and the second area, wherein the first area is thinner than the second area, and the third area is thinner than the first area and is thinner than the second area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.