Method of forming a semiconductor device with decreased undercutting of semiconductor material
US7323373B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2006 |
| Grant date | Jan 29, 2008 |
| Priority date | — |
| Expiry date | Feb 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0245
Abstract
A semiconductor device is formed by patterning a semiconductor layer to create a vertical active region and a horizontal active region, wherein the horizontal active region is adjacent the vertical active region. The semiconductor layer overlies an insulating layer. A spacer is formed adjacent the vertical active region and over a portion of the horizontal active region. At least a portion of the horizontal active region is oxidized to form an isolation region. The spacer is removed. A gate dielectric is formed over the vertical active region after removing the spacer. A gate electrode is formed over the gate dielectric. However, forming the spacer is optional.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.