Via and skip via structures

US10157833B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Xunyuan Zhang · Albany, US
• Dongfei Pei · Newton, US
• Frank W. Mont · Troy, US

Key dates

• Filing date: May 23, 2017
• Grant date: Dec 18, 2018
• Expiry date: May 23, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76834
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present disclosure generally relates to semiconductor structures and, more particularly, to via and skip via structures and methods of manufacture. The method includes: forming a plurality of openings in a hardmask material; blocking at least one of the plurality of openings of the hardmask material with a blocking material; etching a skip via to a metallization feature in a stack of metallization features through another of the plurality of openings which is not blocked by the blocking material; and at least partially filling the skip via by a bottom up fill process.