Fleming Lam
15Patents
7h-index
7Co-inventors
55Inventor score
Filing activity: Sep 1, 2010 → Sep 25, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8350624B2 | Amplifiers and related biasing methods and devices | Electricity | 30 | Active |
| US9509263B2 | Amplifiers and related biasing methods and devices | Electricity | 30 | Active |
| US8373490B2 | Method, system, and apparatus for RF and DC switching | Electricity | 28 | Active |
| US9184731B2 | Method and apparatus for preventing digital step attenuator output power peaking during attenuation state transitions | Electricity | 12 | Active |
| US11405034B1 | Body resistor bypass for RF FET switch stack | Electricity | 9 | Active |
| US11405031B1 | Gate resistor bypass for RF FET switch stack | Electricity | 8 | Active |
| US8970303B2 | Amplifiers and related biasing methods and devices | Electricity | 7 | Active |
| US11405035B1 | Gate resistor bypass for RF FET switch stack | Electricity | 6 | Active |
| US10003322B2 | Temperature compensated digital step attenuator | Electricity | 5 | Active |
| US11671135B2 | Methods and apparatus for reducing switching time of RF FET switching devices | Electricity | 5 | Active |
| US10432238B1 | Detuning multiband tunable matching networks | Electricity | 1 | Active |
| US10277201B2 | Temperature compensated digital step attenuator | Electricity | 1 | Active |
| US8994448B2 | Systems and methods for generation of internal chip supply bias from high voltage control line inputs | Electricity | 0 | Active |
| US12081210B2 | Body resistor bypass for RF FET switch stack | Electricity | 0 | Active |
| US12101072B2 | Glitch reduction in phase shifters | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.