Metal and silicon containing capping layers for interconnects

US8753978B2 · kind B2 · utility

Assignee

• Novellus Systems, Inc. · US

Inventors

• Jengyi Yu · San Ramon, US
• Gengwei Jiang · Tigard, US
• Pramod Subramonium · Beaverton, US
• Roey Shaviv · Palo Alto, US
• Hui-Jung Wu · Fremont, US
• Nagraj Shankar · Tualatin, US

Key dates

• Filing date: Jun 1, 2012
• Grant date: Jun 17, 2014
• Expiry date: Aug 21, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76883
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Disclosed methods cap exposed surfaces of copper lines with a layer of metal or metal-containing compound combined with silicon. In some cases, the metal or metal-containing compound forms an atomic layer. In certain embodiments, the methods involve exposing the copper surface first to a metal containing precursor to form an atomic layer of adsorbed precursor or metal atoms, which may optionally be converted to an oxide, nitride, carbide, or the like by, e.g., a pinning treatment. Subsequent exposure to a silicon-containing precursor may proceed with or without metallic atoms being converted.