Herbert Struyf
4Patents
3h-index
12Co-inventors
43Inventor score
Filing activity: Feb 25, 1999 → Jul 24, 2007
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6352936B1 | Method for stripping ion implanted photoresist layer | Physics | 12 | Expired |
| US6844266B2 | Anisotropic etching of organic-containing insulating layers | Electricity | 6 | Expired |
| US7807583B2 | High aspect ratio via etch | Performing Operations; Transporting | 5 | Active |
| US7611986B2 | Dual damascene patterning method | Electricity | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.