Method for stripping ion implanted photoresist layer

US6352936B1 · kind B1 · utility

Assignees

• IMEC VZW · BE
• Matrix Integrated Systems, Inc. · US

Inventors

• Christian Jehoul · Houthalen-Helchteren, BE
• Kristel Van Baekel · Meerhout, BE
• Werner Boullart · Leuven, BE
• Herbert Struyf · Kontich, BE
• Serge Vanhaelemeersch · Leuven, BE

Key dates

• Filing date: Feb 25, 1999
• Grant date: Mar 5, 2002
• Expiry date: Feb 25, 2019

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/427
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

The present invention concerns a method for stripping the photoresist layer and the crust from a semiconductor. The crust has been formed with as a result of an ion implantation step, wherein the method comprises an ion assisted plasma step using a mixture of water vapour, helium and a F-containing compound in which radicals are generated, and the step of contacting said photoresist layer and crust with said radicals to remove said photoresist layer and crust from said semiconductor surface. Said plasma step is preferably an ion assisted plasma step.