In Deog BAE
4Patents
2h-index
9Co-inventors
37Inventor score
Filing activity: Feb 13, 2004 → Mar 23, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7385237B2 | Fin field effect transistors with low resistance contact structures | Electricity | 20 | Expired |
| US7052952B2 | Method for forming wire line by damascene process using hard mask formed from contacts | Emerging Cross-Sectional Technologies | 3 | Expired |
| US8124538B2 | Selective etch of high-k dielectric material | Electricity | 1 | Active |
| US9673057B2 | Method for forming stair-step structures | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.