Selective etch of high-k dielectric material
US8124538B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2009 |
| Grant date | Feb 28, 2012 |
| Priority date | — |
| Expiry date | Jun 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31122
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for selectively etching a high-k dielectric layer with respect to a polysilicon material is provided. The high-k dielectric layer is partially removed by Ar sputtering, and then the high-k dielectric layer is etched using an etching gas comprising BCl3. The high-k dielectric layer and the polysilicon material may be formed on a substrate. In order to partially remove the high-k dielectric layer, a sputtering gas containing Ar is provided into an etch chamber in which the substrate is placed, a plasma is generated from the sputtering gas, and then the sputtering gas is stopped. In order to etch the high-k dielectric layer, the etching gas is provided into the etch chamber, a plasma is generated from the etching gas, and then the etching gas is stopped.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.