Method for forming stair-step structures
US9673057B2 · kind B2 · utility
0Cited by
21References
14Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 23, 2015 |
| Grant date | Jun 6, 2017 |
| Priority date | — |
| Expiry date | Apr 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a stair-step structure in a substrate within a plasma processing chamber is provided. An organic mask is formed over the substrate. The organic mask is trimmed with a vertical to lateral ratio of less than 0.8, wherein the trimming simultaneously forms a deposition over the organic mask. The substrate is etched. The steps of trimming the organic mask and etching the substrate are cyclically repeated a plurality of times.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.