Ina Ostermay
4Patents
3h-index
6Co-inventors
36Inventor score
Filing activity: Jul 17, 2009 → Oct 13, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8053273B2 | Shallow PN junction formed by in situ doping during selective growth of an embedded semiconductor alloy by a cyclic growth/etch deposition process | Electricity | 27 | Active |
| US8728896B2 | Embedded sigma-shaped semiconductor alloys formed in transistors by applying a uniform oxide layer prior to cavity etching | Electricity | 5 | Active |
| US8466018B2 | Methods of forming a PMOS device with in situ doped epitaxial source/drain regions | Electricity | 3 | Active |
| US8906811B2 | Shallow pn junction formed by in situ doping during selective growth of an embedded semiconductor alloy by a cyclic growth/etch deposition process | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.