Shallow PN junction formed by in situ doping during selective growth of an embedded semiconductor alloy by a cyclic growth/etch deposition process

US8053273B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Thorsten Kammler · Radeberg, DE
• Andy Wei · Queensbury, US
• Ina Ostermay · Berlin, DE

Key dates

• Filing date: Jul 17, 2009
• Grant date: Nov 8, 2011
• Expiry date: Nov 5, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/26586
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A silicon/carbon alloy may be formed in drain and source regions, wherein another portion may be provided as an in situ doped material with a reduced offset with respect to the gate electrode material. For this purpose, in one illustrative embodiment, a cyclic epitaxial growth process including a plurality of growth/etch cycles may be used at low temperatures in an ultra-high vacuum ambient, thereby obtaining a substantially bottom to top fill behavior.