Methods of forming a PMOS device with in situ doped epitaxial source/drain regions

US8466018B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Ralf Illgen · Dresden, DE
• Stefan Flachowsky · Dresden, DE
• Ina Ostermay · Berlin, DE

Key dates

• Filing date: Jul 26, 2011
• Grant date: Jun 18, 2013
• Expiry date: Jul 26, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

Disclosed herein is a method of forming a semiconductor device. In one example, the method includes forming extension implant regions in a PMOS region and a NMOS region of a semiconducting substrate for a PMOS device and a NMOS device, respectively and, after forming the extension implant regions, performing a first heating process. The method further includes forming a plurality of cavities in the PMOS region of the substrate, performing at least one epitaxial deposition process to form a plurality of in-situ doped semiconductor layers that are positioned in or above each of said cavities, and forming a masking layer that exposes the NMOS region and covers the PMOS region. The method concludes with the steps of forming source/drain implant regions in the NMOS region of the substrate for the NMOS device and performing a second heating process.