J. Edwin Hostetter
7Patents
3h-index
9Co-inventors
46Inventor score
Filing activity: Dec 8, 2004 → Mar 10, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7723824B2 | Methodology for recovery of hot carrier induced degradation in bipolar devices | Electricity | 16 | Active |
| US8159814B2 | Method of operating transistors and structures thereof for improved reliability and lifetime | Electricity | 9 | Active |
| US9059204B2 | Methodology and apparatus for tuning driving current of semiconductor transistors | Electricity | 3 | Active |
| US7238565B2 | Methodology for recovery of hot carrier induced degradation in bipolar devices | Electricity | 3 | Expired |
| US7919834B2 | Edge seal for thru-silicon-via technology | Electricity | 3 | Active |
| US9059051B2 | Inline measurement of through-silicon via depth | Electricity | 0 | Active |
| US9865514B2 | Inline measurement of through-silicon via depth | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.