Methodology for recovery of hot carrier induced degradation in bipolar devices
US7238565B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2004 |
| Grant date | Jul 3, 2007 |
| Priority date | — |
| Expiry date | Apr 13, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/891
Abstract
A method for recovery of degradation caused by avalanche hot carriers is provided that includes subjecting an idle bipolar transistor exhibiting avalanche degradation to a thermal anneal step which increases temperature of the transistor thereby recovering the avalanche degradation of the bipolar transistor. In one embodiment, the annealing source is a self-heating structure that is a Si-containing resistor that is located side by side with an emitter of the bipolar transistor. During the recovering step, the bipolar transistor including the self-heating structure is placed in the idle mode (i.e., without bias) and a current from a separate circuit is flown through the self-heating structure. In another embodiment of the present, the annealing step is a result of providing a high forward current (around the peak fT current or greater) to the bipolar transistor while operating below the avalanche condition (V″CB of less than 1 V). Under the above conditions, about 40% or greater of the degradation can be recovered. In yet another embodiment of the present invention, the thermal annealing step may include a rapid thermal anneal (RTA), a furnace anneal, a laser anneal or a spike annea…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.