Jin-Won Jun
3Patents
3h-index
6Co-inventors
36Inventor score
Filing activity: Apr 11, 2003 → Jan 18, 2005
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6911397B2 | Method of forming dual damascene interconnection using low-k dielectric | Electricity | 25 | Expired |
| US7361565B2 | Method of forming a metal gate in a semiconductor device | Electricity | 16 | Expired |
| US6878598B2 | Method of forming thick metal silicide layer on gate electrode | Electricity | 5 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.