John Caffall
5Patents
4h-index
17Co-inventors
46Inventor score
Filing activity: Sep 5, 1997 → Feb 19, 2003
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6809402B1 | Reflowable-doped HDP film | Electricity | 46 | Expired |
| US7118967B1 | Protection of charge trapping dielectric flash memory devices from UV-induced charging in BEOL processing | Emerging Cross-Sectional Technologies | 8 | Expired |
| US6329718A | Method for reducing stress-induced voids for 0.25m.mu. and smaller semiconductor chip technology by annealing interconnect lines and using low bias voltage and low interlayer dielectric deposition rate and semiconductor chip made thereby | Electricity | 7 | Expired |
| US6060404A | In-situ deposition of stop layer and dielectric layer during formation of local interconnects | Electricity | 5 | Expired |
| US6492258B1 | METHOD FOR REDUCING STRESS-INDUCED VOIDS FOR 0.25-&mgr;M AND SMALLER SEMICONDUCTOR CHIP TECHNOLOGY BY ANNEALING INTERCONNECT LINES AND USING LOW BIAS VOLTAGE AND LOW INTERLAYER DIELECTRIC DEPOSITION RATE AND SEMICONDUCTOR CHIP MADE THEREBY | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.