In-situ deposition of stop layer and dielectric layer during formation of local interconnects
US6060404A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 1997 |
| Grant date | May 9, 2000 |
| Priority date | — |
| Expiry date | Sep 5, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An in-situ deposition method allows for the forming of a dielectric layer suitable for use in forming a conductive path in a semiconductor wafer. The method includes depositing a thin SiO.sub.x N.sub.y stop layer on top of a semiconductor wafer within a chemical vapor deposition (CVD) reactor chamber having a low pressure, maintaining the low pressure following the deposition of the SiO.sub.x N.sub.y stop layer, and then depositing a thick TEOS oxide dielectric layer on the SiO.sub.x N.sub.y stop layer within the CVD reactor chamber. The in-situ deposition process reduces outgassing defects that would normally form at the interface between the SiON stop layer and the TEOS oxide dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.