Protection of charge trapping dielectric flash memory devices from UV-induced charging in BEOL processing
US7118967B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2003 |
| Grant date | Oct 10, 2006 |
| Priority date | — |
| Expiry date | Jul 19, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/954
Abstract
A method of protecting a charge trapping dielectric flash memory cell from UV-induced charging, including fabricating a charge trapping dielectric flash memory cell including a charge trapping dielectric charge storage layer in a semiconductor device; and during processing steps subsequent to formation of the charge trapping dielectric charge storage layer, protecting the charge trapping dielectric flash memory cell from exposure to a level of UV radiation sufficient to deposit a non-erasable charge in the charge trapping dielectric flash memory cell. In one embodiment, the step of protecting is carried out by selecting processes in BEOL fabrication which do not include use, generation or exposure of the semiconductor device to a level of UV radiation sufficient to deposit the non-erasable charge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.