Reflowable-doped HDP film
US6809402B1 · kind B1 · utility
46Cited by
7References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2002 |
| Grant date | Oct 26, 2004 |
| Priority date | — |
| Expiry date | Aug 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Device leakage due to spacer undercutting is remedied by depositing a B-doped HDP or a BP-doped HDP oxide gap filling layer capable of flowing into undercut regions. Embodiments include depositing a B or BP-doped HDP oxide film containing 4 to 6 wt. % B over closely spaced apart non-volatile transistors and heating during and subsequent to deposition to complete flowing of the B- or BP-HDP oxide into and filling the undercut regions on the sidewall spacers and to densify the B- or BP-HDP oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.