Jonathan Rullan
4Patents
2h-index
7Co-inventors
37Inventor score
Filing activity: Sep 16, 2003 → May 13, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9524935B2 | Filling cavities in an integrated circuit and resulting devices | Electricity | 6 | Active |
| US7776740B2 | Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device | Electricity | 3 | Active |
| US6768111B1 | Method for SEM measurement of topological features | Physics | 1 | Expired |
| US7884012B2 | Void-free copper filling of recessed features for semiconductor devices | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.