Jong-Sik Na
4Patents
2h-index
9Co-inventors
37Inventor score
Filing activity: Jan 11, 2000 → Nov 14, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6381188B1 | DRAM capable of selectively performing self-refresh operation for memory bank | Physics | 94 | Expired |
| US6930948B2 | Semiconductor memory device having an internal voltage generation circuit for selectively generating an internal voltage according to an external voltage level | Physics | 13 | Expired |
| US10289486B2 | Memory with pattern oriented error correction code | Physics | 1 | Active |
| US10735682B2 | Dram with staggered word line transitions for hybrid-bonded photosensor arrays | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.