Kui Pu
7Patents
4h-index
5Co-inventors
42Inventor score
Filing activity: Jul 22, 2014 → Feb 5, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9093522B1 | Vertical power MOSFET with planar channel and vertical field plate | Electricity | 29 | Active |
| US9461127B2 | Vertical power MOSFET having planar channel and its method of fabrication | Electricity | 4 | Active |
| US9184248B2 | Vertical power MOSFET having planar channel and its method of fabrication | Electricity | 4 | Active |
| US9761702B2 | Power MOSFET having planar channel, vertical current path, and top drain electrode | Electricity | 4 | Active |
| US10157983B2 | Vertical power MOS-gated device with high dopant concentration N-well below P-well and with floating P-islands | Electricity | 2 | Active |
| US9947779B2 | Power MOSFET having lateral channel, vertical current path, and P-region under gate for increasing breakdown voltage | Electricity | 2 | Active |
| US11289596B2 | Split gate power device and its method of fabrication | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.