Semiconductor device incorporating epitaxial layer field stop zone
US11031465B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 2019 |
| Grant date | Jun 8, 2021 |
| Priority date | — |
| Expiry date | May 22, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/617
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor body having a base region incorporating a field stop zone where the base region and the field stop zone are both formed using an epitaxial process. Furthermore, the epitaxial layer field stop zone is formed with an enhanced doping profile to realize improved soft-switching performance for the semiconductor device. In some embodiments, the enhanced doping profile formed in the field stop zone includes varying, non-constant doping levels. In some embodiments, the enhanced doping profile includes one of an extended graded doping profile, a multiple stepped flat doping profile, or a multiple spike doping profile. The epitaxial layer field stop zone of the present invention enables complex field stop zone doping profiles to be used to obtain the desired soft-switching characteristics in the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.