Method for growing a single crystal by crystallizing the single crystal from a float zone

US9932691B2 · kind B2 · utility

Assignee

• Siltronic AG · DE

Inventors

• Georg Raming · Tann, DE
• Ludwig Altmannshofer · Lenggries, DE
• Gundars Ratnieks · Burghausen, DE
• Martin Moeller · Haiming, DE
• Frank Muemmler · Emmerting, DE

Key dates

• Filing date: Nov 19, 2015
• Grant date: Apr 3, 2018
• Expiry date: Nov 19, 2035

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B29/06
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A single crystal is grown in a float zone which is inductively heated and the crystallizing single crystal is rotated in a direction of rotation which is periodically reversed at intervals in accordance with an alternating plan, wherein a dwell time during which the single crystal is in a state of rest because of the reversal of the direction of rotation is limited to no more than 60 ms.