Patent · US Active

Method and apparatus for producing a single crystal

US9422634B2 · kind B2 · utility

0Cited by

2References

12Claims

0Family size

Assignee

Siltronic AG · DE

Inventors

Georg Raming · Tann, DE
Ludwig Altmannshofer · Lenggries, DE
Gundars Ratnieks · Burghausen, DE
Johann Landrichinger · Burgkirchen, AT
Josef Lobmeyer · Bad Füssing, DE
Alfred Holzinger · Mattighofen, AT

Key dates

Filing date	Dec 5, 2012
Grant date	Aug 23, 2016
Priority date	—
Expiry date	Mar 8, 2035

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T117/1088
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

Single crystals are produced by means of the floating zone method, wherein the single crystal crystallizes below a melt zone at a crystallization boundary, and the emission of crystallization heat is impeded by a reflector surrounding the single crystal, wherein the single crystal is heated in the region of an outer edge of the crystallization boundary by means of a heating device in a first zone, wherein a distance Δ between an outer triple point Ta at the outer edge of the crystallization boundary and a center Z of the crystallization boundary is influenced. An apparatus for producing the single crystal provides a heat source below the melting induction coil and above the reflector.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.