Increasing stress-enhanced drive current in a MOS transistor

US6870179B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• M. Shaheed · Portland, US
• Thomas Hoffmann · Santa Cruz, US
• Mark Armstrong · Portland, US
• Christopher P. Auth · Portland, US

Key dates

• Filing date: Mar 31, 2003
• Grant date: Mar 22, 2005
• Expiry date: Mar 31, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/792

Abstract

An intentional recess or indentation is created in a region of semiconductor material that will become part of a channel of a metal oxide semiconductor (MOS) transistor structure. A layer is created on a surface of the recess to induce an appropriate type of stress in the channel.