Mao-Min Chen
107Patents
23h-index
66Co-inventors
93Inventor score
Filing activity: Dec 27, 1990 → Jan 20, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5652687A | Planarized thin film magnetic write head with submicron trackwidth | Emerging Cross-Sectional Technologies | 100 | Expired |
| US5802700A | Method of making a planarized thin film magnetic write head with submicron trackwidth | Emerging Cross-Sectional Technologies | 98 | Expired |
| US6292336A | Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficient | Physics | 96 | Expired |
| US5606478A | Ni.sub.45 Fe.sub.55 metal-in-gap thin film magnetic head | Physics | 96 | Expired |
| US5491600A | Multi-layer conductor leads in a magnetoresistive head | Physics | 93 | Expired |
| US5283942A | Sacrificial layer planarization process for fabricating a narrow thin film inductive head | Emerging Cross-Sectional Technologies | 59 | Expired |
| US5175658A | Thin film magnetic head having a protective coating and method for making same | Physics | 58 | Expired |
| US5452165A | Close packed magnetic head linear array | Physics | 50 | Expired |
| US6770382B1 | GMR configuration with enhanced spin filtering | Emerging Cross-Sectional Technologies | 43 | Expired |
| US5285339A | Magnetoresistive read transducer having improved bias profile | Physics | 43 | Expired |
| US5664316A | Method of manufacturing magnetoresistive read transducer having a contiguous longitudinal bias layer | Emerging Cross-Sectional Technologies | 42 | Expired |
| US5812350A | Metal-in-gap thin film magnetic head employing Ni.sub.45 Fe.sub.55 | Physics | 41 | Expired |
| US5271802A | Method for making a thin film magnetic head having a protective coating | Emerging Cross-Sectional Technologies | 38 | Expired |
| US5864450A | NI45FE55 metal-in-gap thin film magnetic head | Physics | 36 | Expired |
| US5843521A | Photoresist frame plated magnetic transducer pole layer employing high magnetic permeability seed layer | Emerging Cross-Sectional Technologies | 36 | Expired |
| US6103136A | Method for forming a soft adjacent layer (SAL) magnetoresistive (MR) sensor element with transversely magnetically biased soft adjacent layer (SAL) | Emerging Cross-Sectional Technologies | 35 | Expired |
| US5282308A | Thin film planarization process for fabricating magnetic heads employing a stitched pole structure | Emerging Cross-Sectional Technologies | 32 | Expired |
| US6243939A | High ion beam etch selectivity for partial pole trim application | Emerging Cross-Sectional Technologies | 30 | Expired |
| US8673654B2 | Underlayer for high performance magnetic tunneling junction MRAM | Emerging Cross-Sectional Technologies | 28 | Active |
| US5262914A | Magnetoresistive head with enhanced exchange bias field | Physics | 27 | Expired |
| US6129957A | Method of forming a second antiferromagnetic exchange-coupling layer for magnetoresistive (MR) and giant MR (GMR) applications | Emerging Cross-Sectional Technologies | 26 | Expired |
| US6324037A | Magnetically stable spin-valve sensor | Physics | 25 | Expired |
| US7611912B2 | Underlayer for high performance magnetic tunneling junction MRAM | Emerging Cross-Sectional Technologies | 24 | Expired |
| US6383574B1 | Ion implantation method for fabricating magnetoresistive (MR) sensor element | Electricity | 22 | Expired |
| US6430015B2 | Method of fabrication of striped magnetoresistive (SMR) and dual stripe magnetoresistive (DSMR) heads with anti-parallel exchange configuration | Physics | 22 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.