Ion implantation method for fabricating magnetoresistive (MR) sensor element
US6383574B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 23, 1999 |
| Grant date | May 7, 2002 |
| Priority date | — |
| Expiry date | Jul 23, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/302
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for forming a magnetoresistive (MR) layer first employs a substrate over which is formed a magnetoresistive (MR) layer formed of a magnetoresistive (MR) material. There is then ion implanted selectively, while employing an ion implant method, the magnetoresistive (MR) layer to form: (1) an ion implanted portion of the magnetoresistive (MR) layer formed of an ion implanted magnetoresistive (MR) material; and (2) an adjoining non ion implanted portion of the magnetoresistive (MR) layer formed of the magnetoresistive (MR) material, where the ion implanted magnetoresistive (MR) material is a non magnetoresistive (MR) material. The method may be employed for forming within magnetoresistive (MR) sensor elements magnetoresistive (MR) layers with enhanced dimensional uniformity, and in particular enhanced overlay dimensional uniformity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.