Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficient
US6292336A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 1999 |
| Grant date | Sep 18, 2001 |
| Priority date | — |
| Expiry date | Sep 30, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method for forming a giant magnetoresistive (GMR) sensor element, and a giant magnetoresistive (GMR) sensor element formed in accord with the method. In accord with the method, there is first provided a substrate. There is then formed over the substrate a seed layer formed of a magnetoresistive (MR) resistivity sensitivity enhancing material selected from the group consisting or nickel-chromium alloys and nickel-iron-chromium alloys. There is then formed over the seed layer a nickel oxide material layer. Finally, there is then formed over the nickel oxide material layer a free ferromagnetic layer separated from a pinned ferromagnetic layer in turn formed thereover by a non-magnetic conductor spacer layer, where the pinned ferromagnetic layer in turn has a pinning material layer formed thereover. The method contemplates a giant magnetoresistive (GMR) sensor element formed in accord with the method. The nickel oxide material layer provides the giant magnetoresistive (GMR) sensor element with an enhanced magnetoresistive (MR) resistivity sensitivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.