Marc C. French
10Patents
3h-index
24Co-inventors
52Inventor score
Filing activity: Dec 17, 2012 → Oct 19, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8748940B1 | Semiconductor devices with germanium-rich active layers and doped transition layers | Emerging Cross-Sectional Technologies | 28 | Active |
| US8785907B2 | Epitaxial film growth on patterned substrate | Electricity | 12 | Active |
| US10847656B2 | Fabrication of non-planar IGZO devices for improved electrostatics | Electricity | 4 | Active |
| US10249742B2 | Offstate parasitic leakage reduction for tunneling field effect transistors | Electricity | 2 | Active |
| US9159787B2 | Semiconductor devices with germanium-rich active layers and doped transition layers | Emerging Cross-Sectional Technologies | 2 | Active |
| US9691848B2 | Semiconductor devices with germanium-rich active layers and doped transition layers | Emerging Cross-Sectional Technologies | 1 | Active |
| US9490329B2 | Semiconductor devices with germanium-rich active layers and doped transition layers | Emerging Cross-Sectional Technologies | 0 | Active |
| US10008565B2 | Semiconductor devices with germanium-rich active layers and doped transition layers | Emerging Cross-Sectional Technologies | 0 | Active |
| US11626519B2 | Fabrication of non-planar IGZO devices for improved electrostatics | Electricity | 0 | Active |
| US11450527B2 | Engineering tensile strain buffer in art for high quality Ge channel | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.