Semiconductor devices with germanium-rich active layers and doped transition layers

US8748940B1 · kind B1 · utility

Assignee

• Intel Corporation · US

Inventors

• Willy Rachmady · Beaverton, US
• Van H. Le · Portland, US
• Ravi Pillarisetty · Portland, US
• Jessica S. Kachian · Portland, US
• Marc C. French · Forest Grove, US
• Aaron A. Budrevich · Portland, US

Key dates

• Filing date: Dec 17, 2012
• Grant date: Jun 10, 2014
• Expiry date: Dec 17, 2032

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Semiconductor device stacks and devices made there from having Ge-rich device layers. A Ge-rich device layer is disposed above a substrate, with a p-type doped Ge etch suppression layer (e.g., p-type SiGe) disposed there between to suppress etch of the Ge-rich device layer during removal of a sacrificial semiconductor layer richer in Si than the device layer. Rates of dissolution of Ge in wet etchants, such as aqueous hydroxide chemistries, may be dramatically decreased with the introduction of a buried p-type doped semiconductor layer into a semiconductor film stack, improving selectivity of etchant to the Ge-rich device layers.