Michael Iwatake
3Patents
1h-index
22Co-inventors
37Inventor score
Filing activity: Jul 29, 2002 → Sep 9, 2004
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8288828B2 | Via contact structure having dual silicide layers | Electricity | 2 | Active |
| US6960306B2 | Low Cu percentages for reducing shorts in AlCu lines | Electricity | 0 | Expired |
| US6740568B2 | Method to enhance epitaxial regrowth in amorphous silicon contacts | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.