Method to enhance epitaxial regrowth in amorphous silicon contacts
US6740568B2 · kind B2 · utility
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12References
8Claims
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Key dates
| Filing date | Jul 29, 2002 |
| Grant date | May 25, 2004 |
| Priority date | — |
| Expiry date | Jul 29, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/05
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of forming a contact, a liner reactive ion etch is affected on a substrate to remove silicon nitride and silicon oxide. An oxygen plasma ex-situ clean, a Huang AB clean, and a dilute hydrofluric acid (DHF) clean are affected. Amorphous silicon is deposited and an anneal is performed to regrow and recrystallize amorphous silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.