Via contact structure having dual silicide layers

US8288828B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Michael Iwatake · Wappingers Falls, US
• Kevin E. Mello · Fishkill, US
• Matthew Oonk · Poughkeepsie, US
• Amanda Piper · Wappingers Falls, US
• Yun-Yu Wang · Poughquag, US
• Keith Kwong Hon Wong · Wappingers Falls, US

Key dates

• Filing date: Sep 9, 2004
• Grant date: Oct 16, 2012
• Expiry date: Sep 15, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76877
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A via contact is provided to a diffusion region at a top surface of a substrate which includes a single-crystal semiconductor region. The via contact includes a first layer which consists essentially of a silicide of a first metal in contact with the diffusion region at the top surface. A dielectric region overlies the first layer, the dielectric region having an outer surface and an opening extending from the outer surface to the top surface of the substrate. A second layer lines the opening and contacts the top surface of the substrate in the opening, the second layer including a second metal which lines a sidewall of the opening and a silicide of the second metal which is self-aligned to the top surface of the substrate in the opening. A diffusion barrier layer overlies the second layer within the opening. A third layer including a third metal overlies the diffusion barrier layer and fills the opening.