Milan Pesic
5Patents
1h-index
6Co-inventors
33Inventor score
Filing activity: Feb 5, 2020 → May 2, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11205467B2 | Ferroelectric memory and logic cell and operation method | Physics | 3 | Active |
| US12141688B2 | Crested barrier device and synaptic element | Electricity | 0 | Active |
| US12310037B2 | Ferroelectric tunnel junction devices with internal biases for long retention | Physics | 0 | Active |
| US11849653B2 | Controlling positive feedback in filamentary | Physics | 0 | Active |
| US12094787B2 | Characterizing defects in semiconductor layers | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.