Fabrication of gate-all-around integrated circuit structures having molybdenum nitride metal gates and gate dielectrics with a dipole layer

US12051698B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Daniel G. Ouellette · Portland, US
• Daniel B. O'Brien · Beaverton, US
• Jeffrey S. Leib · Beaverton, US
• Orb Acton · Portland, US
• Lukas Baumgartel · Portland, US
• Dan S. LAVRIC · Beaverton, US
• Dax M. Crum · Beaverton, US
• Oleg Golonzka · Beaverton, US
• Tahir Ghani · Portland, US

Key dates

• Filing date: Sep 23, 2020
• Grant date: Jul 30, 2024
• Expiry date: Nov 28, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/017

Abstract

Gate-all-around integrated circuit structures having molybdenum nitride metal gates and gate dielectrics with a dipole layer are described. For example, an integrated circuit structure includes a first vertical arrangement of horizontal nanowires, and a second vertical arrangement of horizontal nanowires. A first gate stack is over the first vertical arrangement of horizontal nanowires, the first gate stack having a P-type conductive layer on a first gate dielectric. The P-type conductive layer includes molybdenum and nitrogen. A second gate stack is over the second vertical arrangement of horizontal nanowires, the second gate stack having an N-type conductive layer on a second gate dielectric.