Process for producing an epitalixal layer of galium nitride
US7560296B2 · kind B2 · utility
4Cited by
7References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 11, 2006 |
| Grant date | Jul 14, 2009 |
| Priority date | — |
| Expiry date | Sep 11, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a low defect density GaN material comprising at least two step of growing epitaxial layers of GaN with differences in growing conditions, (a.) a first step of growing an epitaxial layer GaN on an epitaxially compentent layer under first growing conditions selected to induce island features formation, followed by (b.) a second step of growing an epitaxial layer of GaN under second growing conditions selected to enhance lateral growth until coalescence.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.