Process for producing an epitaxial layer of galium nitride
US8030101B2 · kind B2 · utility
2Cited by
8References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 18, 2009 |
| Grant date | Oct 4, 2011 |
| Priority date | — |
| Expiry date | Jul 18, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a low defect density GaN material comprising at least two steps of growing epitaxial layers of GaN with differences in growing conditions, (a.) a first step of growing an epitaxial layer GaN on an epitaxially competent layer under first growing conditions selected to induce island features formation, followed by (b.) a second step of growing an epitaxial layer of GaN under second growing conditions selected to enhance lateral growth until coalescence.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.