Plasma-enhanced chemical vapor deposition (CVD) method to fill a trench in a semiconductor substrate

US6362098B1 · kind B1 · utility

Assignees

• Motorola, Inc. · US
• Semiconductor 300 GmbH & Co. KG · DE
• Infineon Technologies AG · DE

Inventors

• Terry A. Breeden · Mabank, US
• Iraj Shahvandi · Round Rock, US
• Michael Tucker · Dallas, US
• Olivier Vatel · Round Rock, US
• Karl Mautz · Round Rock, US
• Ralf Zedlitz · Dresden, DE

Key dates

• Filing date: Feb 28, 2001
• Grant date: Mar 26, 2002
• Expiry date: Feb 28, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02274
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In a CVD chamber (120) having a chuck (122) to hold a semiconductor substrate (100) and having a plasma generator (121) to generate a plasma (125), a trench in the substrate is filled with dielectric material from ions (126) of the plasma. The ions are forced to move in a direction (127) that is substantially perpendicular to the surface of the substrate by a pulsed unidirectional voltage between the plasma generator and the substrate, by a circular magnetic field, or by a combination of both fields.