Ramesh Venugopal
3Patents
2h-index
4Co-inventors
33Inventor score
Filing activity: Nov 29, 2004 → Apr 5, 2012
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7208379B2 | Pitch multiplication process | Electricity | 145 | Expired |
| US7407850B2 | N+ poly on high-k dielectric for semiconductor devices | Electricity | 3 | Expired |
| US8435849B2 | Method of forming a CMOS IC having a compressively stressed metal layer in the NMOS area | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.