Ritesh Garg
5Patents
1h-index
5Co-inventors
33Inventor score
Filing activity: Oct 20, 2020 → Apr 8, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11404121B2 | Methods for writing ternary content addressable memory devices | Physics | 1 | Active |
| US11967377B2 | Dynamically gated search lines for low-power multi-stage content addressable memory | Physics | 0 | Active |
| US11557328B2 | Simultaneous write and search operation in a content addressable memory | Physics | 0 | Active |
| US11894054B2 | Methods for writing ternary content addressable memory devices | Physics | 0 | Active |
| US11342022B2 | Low-power multi-stage/multi-segment content addressable memory device | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.