Scott Falk
6Patents
1h-index
15Co-inventors
37Inventor score
Filing activity: Jul 16, 2019 → Oct 11, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11469107B2 | Highly etch selective amorphous carbon film | Electricity | 2 | Active |
| US11201057B2 | Techniques and apparatus for anisotropic stress compensation in substrates using ion implantation | Electricity | 1 | Active |
| US12014927B2 | Highly etch selective amorphous carbon film | Electricity | 0 | Active |
| US12112949B2 | Highly etch selective amorphous carbon film | Electricity | 0 | Active |
| US11875995B2 | Techniques and apparatus for anisotropic stress compensation in substrates using ion implantation | Electricity | 0 | Active |
| US11551904B2 | System and technique for profile modulation using high tilt angles | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.