Highly etch selective amorphous carbon film
US12112949B2 · kind B2 · utility
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18References
29Claims
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Key dates
| Filing date | Oct 10, 2022 |
| Grant date | Oct 8, 2024 |
| Priority date | — |
| Expiry date | Oct 10, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31155
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.