Techniques and apparatus for anisotropic stress compensation in substrates using ion implantation
US11875995B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Nov 9, 2021 |
| Grant date | Jan 16, 2024 |
| Priority date | — |
| Expiry date | Dec 21, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3171
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method may include providing a substrate, where the substrate includes a first main surface and a second main surface, opposite the first main surface. The second main surface may include a stress compensation layer. The method may include directing ions to the stress compensation layer in an ion implant procedure. The ion implant procedure may include exposing a first region of the stress compensation layer to a first implant process, wherein a second region of the stress compensation layer is not exposed to the first implant process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.