System and technique for profile modulation using high tilt angles
US11551904B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2020 |
| Grant date | Jan 10, 2023 |
| Priority date | — |
| Expiry date | Aug 14, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/20278
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A system and method that allows higher energy implants to be performed, wherein the peak concentration depth is shallower than would otherwise occur is disclosed. The system comprises an ion source, an accelerator, a platen and a platen orientation motor that allows large tilt angles. The system may be capable of performing implants of hydrogen ions at an implant energy of up to 5 MeV. By tilting the workpiece during an implant, the system can be used to perform implants that are typically performed at implant energies that are less than the minimum implant energy allowed by the system. Additionally, the resistivity profile of the workpiece after thermal treatment is similar to that achieved using a lower energy implant. In certain embodiments, the peak concentration depth may be reduced by 3 μm or more using larger tilt angles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.